![[Translate to chinese:] Region of a patterned wafer inspected using optical microscopy and automated and reproducible DIC (differential interference contrast). With DIC users are able to visualize small height differences on the wafer surface more easily. Patterned_wafer_inspected_by_automated_and_reproducible_DIC.jpg](/fileadmin/_processed_/6/b/csm_Patterned_wafer_inspected_by_automated_and_reproducible_DIC_2fb273544e.jpg "[Translate to chinese:] Region of a patterned wafer inspected using optical microscopy and automated and reproducible DIC (differential interference contrast). With DIC users are able to visualize small height differences on the wafer surface more easily.")
在晶圆和半导体生产、质量控制（QC）、故障分析和研发过程中识别和减少缺陷对于组件性能至关重要。为了高效可靠地进行晶圆检测，应利用不同的对比度方法。一种重要的对比度方法是微分干涉对比（DIC）。
与其他对比度方法（如明场或暗场）相比，使用DIC更容易注意到晶圆和半导体上的高度差异。
本文介绍了自动化和可重复的DIC如何帮助用户有效地可视化6英寸晶圆上的小高度差异，从而实现高效的检测工作流程、更高的吞吐量和改进的组件质量。在大多数情况下，使用DIC时，显微镜的照明和对比度设置必须手动调整，这意味着结果在很大程度上取决于用户的经验水平。但是，通过自动DIC操作，即使是经验较少的用户也可以轻松进行可重复的DIC成像。只需按下一个按钮，即可选择和调整适当的DIC棱镜。
通过利用自动化和可靠的DIC，用户可以使用Leica显微镜（如DM6 M或DMi8 M）满足他们对晶圆和半导体材料的快速可靠检测、QC、故障分析和研发的特定需求。
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![[Translate to chinese:] Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illumination.](/fileadmin/_processed_/9/1/csm_Processed_wafer_standard_and_oblique_brightfield_illumination_5f0e4f9174.jpg "[Translate to chinese:] Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illuminati")
![[Translate to chinese:] Neurons imaged with DIC contrast.](/fileadmin/_processed_/3/1/csm_Neurons_imaged_in_DIC_8e18b3dec4.jpg "[Translate to chinese:] Neurons imaged with DIC contrast.")
